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| NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com * Collector -Emitter Sustaining Voltage - * High DC Current Gain - hFE VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging ESD Rating - Human Body Model: Class 1B - Machine Model: Class B Pb-Free Package is Available * * * * POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) IIII II IIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIII I III I IIIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III I I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VCEO VCB VEB IB 30 45 Vdc Vdc Vdc Adc Adc 6.0 1.0 3.0 5.0 Base Current - Continuous Collector Current - Continuous - Peak IC Total Power Dissipation @ TC = 25_C Derate above 25_C Total PD @ TA = 25_C mounted on 1 sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25_C mounted on 0.012 sq. (7.6 sq. mm) Collector pad on FR-4 bd material Operating and Storage Junction Temperature Range PD 3.0 24 1.56 0.72 W mW/_C W W TJ, Tstg - 55 to + 150 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (c) Semiconductor Components Industries, LLC, 2006 Rating Symbol Value Unit SOT-223 CASE 318E STYLE 1 MARKING DIAGRAM AYW 9435R G G 1 A = Assembly Location Y = Year W = Work Week 9435R = Device Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSB9435T1 NSB9435T1G Package SOT-223 SOT-223 (Pb-Free) Shipping 1000/Tape & Reel 1000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 April, 2006 - Rev. 5 Publication Order Number: NSB9435T1/D NSB9435T1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction-to-Case Junction-to-Ambient on 1 sq.(645 sq. mm) Collector pad on FR-4 board material Junction-to-Ambient on 0.012 sq. (7.6 sq. mm) Collector pad on FR-4 board material Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 s Symbol RqJC RqJA RqJA TL Value 42 80 174 260 _C Unit _C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics OFF CHARACTERISTICS Symbol Min Typ Max Unit IIII I I I III I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I IIIIIIIIIIIIIIIIIIIIIIII III I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) Emitter-Base Voltage (IE = 50 mAdc, IC = 0 Adc) VCEO(sus) VEBO ICER Vdc Vdc 30 - - - - - - - 6.0 - - - Collector Cutoff Current (VCE = 25 Vdc) (VCE = 25 Vdc, TJ = 125C) Emitter Cutoff Current (VBE = 5.0 Vdc) mAdc 20 200 IEBO mAdc 700 ON CHARACTERISTICS (Note 1) Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) VCE(sat) Vdc - - - - - 0.155 - - - - 0.210 0.275 0.550 1.25 1.10 - - - VBE(sat) VBE(on) hFE Vdc Vdc - Base-Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) Resistor 125 110 90 7.5 220 - - 10 R1 12.5 kW DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc) Cob Cib fT pF pF - - - 100 135 110 150 - - Current-Gain - Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) MHz 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. fT = |hFE| S ftest http://onsemi.com 2 NSB9435T1 0.3 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.25 0.2 0.15 0.1 0.05 0 0.001 0.01 0.1 1.2 A 0.8 A 0.5 A 0.25 A 1 IC = 3.0 A 1000 hFE, DC CURRENT GAIN TA = 150C 25C -55C 100 VCE = 1.0 V 10 0.1 1 IC, COLLECTOR CURRENT (A) 10 IB, BASE CURRENT (mA) Figure 1. Collector Saturation Region Figure 2. DC Current Gain 1000 10 hFE, DC CURRENT GAIN V, VOLTAGE (V) TA = 150C 25C 100 -55C 1 VBE(sat) 0.1 VCE(sat) VCE = 4.0 V 10 0.1 1 IC, COLLECTOR CURRENT (A) 10 0.01 1.0E-01 1.0E+00 IC, COLLECTOR CURRENT (A) IC/IB = 10 1.0E+01 Figure 3. DC Current Gain Figure 4. "ON" Voltages 1.0E+00 VBE(sat) 1.2 1 -55C 25C TA = 155C V, VOLTAGE (V) VCE(sat) V, VOLTAGE (V) IC/IB = 50 1.0E+01 0.8 0.6 0.4 0.2 0 1.0E-01 1.0E-02 1.0E-01 1.0E+00 IC, COLLECTOR CURRENT (A) 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 5. "ON" Voltages Figure 6. VBE(on) Voltage http://onsemi.com 3 NSB9435T1 1000 Cob, OUTPUT CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 10 0.5 ms 1.0 5.0 ms 100 ms 0.1 100 10 f = 1 MHz TA = 25C 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) 0.01 0.001 0.1 BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Output Capacitance 4.0 PD, POWER DISSIPATION (WATTS) Figure 8. Active Region Safe Operating Area 3.0 TC 2.0 1.0 TA 0 25 50 75 100 125 150 T, TEMPERATURE (C) There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 8 is based on T J(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. T J(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. Figure 9. Power Derating r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 0.01 RqJA(t) = r(t) qJA qJA = 174C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) qJA(t) 0.01 0.1 t, TIME (seconds) 1.0 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 0.0001 0.0001 0.001 Figure 10. Thermal Response http://onsemi.com 4 NSB9435T1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE 1 2 3 E b e1 e q C DIM A A1 b b1 c D E e e1 L1 HE A 0.08 (0003) A1 q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 L1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 NSB9435T1/D |
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